2n4400 / 2n4401 npn epitaxial silicon transistor general purpose transistor collector emitter voltage: v ceo = 40 v collector dissipation: p c (max) = 625 mw on special request, thes e transistors can be manufactured in different pin configurations. to-92 plastic package weight approx. 0.19g absolute maximum ratings (t a = 25 o c) parameter symbol value unit collector base voltage v cbo 60 v collector emitter voltage v ceo 40 v emitter base voltage v ebo 6 v collector current i c 600 ma power dissipation p tot 625 mw junction temperature t j 150 o c storage temperature range t s -55 to +150 o c
2n4400 / 2n4401 characteristics at t amb = 25 o c parameter symbol min. max. unit dc current gain at v ce =1v, i c =0.1ma st 2n4401 h fe 20 - - at v ce =1v, i c =1ma st 2n4400 st 2n4401 h fe h fe 20 40 - - - - at v ce =1v, i c =10ma st 2n4400 st 2n4401 h fe h fe 40 58 - - - - at v ce =1v, i c =150ma st 2n4400 st 2n4401 h fe h fe 50 100 150 300 - - at v ce =2v, i c =500ma st 2n4400 st 2n4401 h fe h fe 20 40 - - - - collector cutoff current at v cb =35v i cbo - 100 na emitter cutoff current at v eb =5v i ebo - 100 na collector emitter breakdown voltage at i c =1ma v (br)ceo 40 - v collector base breakdown voltage at i c =100a v (br)cbo 60 - v emitter base breakdown voltage at i e =100a v (br)ebo 6 - v collector emitter saturation voltage at i c =150ma, i b =15ma at i c =500ma, i b =50ma v cesat v cesat - - 0.4 0.75 v v collector saturation voltage at i c =150ma, i b =15ma at i c =500ma, i b =50ma v besat v besat 0.75 - 0.95 1.2 v v gain bandwidth product at v ce =10v, i c =20ma, f=100mhz st 2n4400 st 2n4401 f t f t 200 250 - - mhz mhz collector base capacitance at v cb =5v, f=100mhz c cbo - 6.5 pf turn on time at v cc =30v, v be =2v, i c =150ma, i b1 =15ma t on - 35 ns turn off time at v cc =30v, i c =150ma, i b1 =i b2 =15ma t off - 255 ns
2n4400 / 2n4401
2n4400 / 2n4401
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